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R1EX24512BSAS0A/R1EX24512BTAS0A
Write Operations (WP =High )
Byte Write: (Write operation during WP =High status )
A write operation requires an 8-bit device address word with R/W = “0”. Then the EEPROM sends acknowledgment
"0" at the ninth clock cycle. After these, the 512kbit EEPROM receives 2 sequence 8-bit memory address words.
Upon receipt of this memory address, the EEPROM outputs acknowledgment "0". After receipt of 8-bit write data, the
EEPROM outputs acknowledgment "1" (NO ACK) . Then the EEPROM write operations are not allowed.
Byte Write Operation
WP
512k
Device
address
1010
W
1st Memory
address (n)
2nd Memory
address (n)
Write data (n)
No ACK
Start
ACK
R/W
ACK
ACK
Stop
Page Write:
The page write is the same sequence as the byte write. The page write is initiated by a start condition, device address
word and memory address(n) with every ninth bit acknowledgment"0". But after inputting write data(Dn) , the
EEPROM outputs acknowledgment "1" (NO ACK ). Then the EEPROM write operations are not allowed.
Page Write Operation
WP
Device
1st Memory
2nd Memory
No ACK
No ACK
512k
Start
address
1010
W
address (n)
ACK
R/W
address (n)
ACK
Write data (n)
ACK
Write data (n+m)
Stop
R10DS0025EJ0001 Rev.0.01
Sep, 01, 2010
Page 11 of 17
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